RS2BHE3_A/I Vishay General Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.25 EUR |
| 5000+ | 0.2 EUR |
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Produktbewertung abgeben
Technische Details RS2BHE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 100V 1.5A DO214AA, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 1.5A, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS2BHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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RS2BHE3_A/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 1.5A DO214AACurrent - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 1.5A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RS2BHE3_A/I | Vishay Semiconductors |
Rectifiers 1.5A, 100V, 150nS SMB, FS, GPP SM RECT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RS2BHE3_A/I |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RS2BHE3_A/I |
|
Hersteller: Vishay Semiconductors
Rectifiers 1.5A, 100V, 150nS SMB, FS, GPP SM RECT
Rectifiers 1.5A, 100V, 150nS SMB, FS, GPP SM RECT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH