RS2BHE3_A/I Vishay General Semiconductor
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |
| 2500+ | 0.25 EUR |
| 5000+ | 0.2 EUR |
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Technische Details RS2BHE3_A/I Vishay General Semiconductor
Description: DIODE GEN PURP 100V 1.5A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 20pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote RS2BHE3_A/I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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RS2BHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 1.5A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |
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| RS2BHE3_A/I | Hersteller : Vishay Semiconductors |
Rectifiers 1.5A, 100V, 150nS SMB, FS, GPP SM RECT |
Produkt ist nicht verfügbar |