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RS3E075ATTB

RS3E075ATTB Rohm Semiconductor

SOP8_TB_taping.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.62 EUR
5000+0.57 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RS3E075ATTB Rohm Semiconductor

Description: MOSFET P-CH 30V 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP-J, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V.

Weitere Produktangebote RS3E075ATTB nach Preis ab 0.46 EUR bis 1.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RS3E075ATTB RS3E075ATTB ROHM Semiconductor SOP8_TB_taping.pdf MOSFETs Pch -30V -7.5A Middle Power
auf Bestellung 7434 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.01 EUR
10+0.89 EUR
100+0.61 EUR
500+0.56 EUR
2500+0.48 EUR
5000+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RS3E075ATTB RS3E075ATTB Rohm Semiconductor SOP8_TB_taping.pdf Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 11173 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
13+1.4 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.68 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
RS3E075ATTB SOP8_TB_taping.pdf
RS3E075ATTB
Hersteller: ROHM Semiconductor
MOSFETs Pch -30V -7.5A Middle Power
auf Bestellung 7434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.01 EUR
10+0.89 EUR
100+0.61 EUR
500+0.56 EUR
2500+0.48 EUR
5000+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RS3E075ATTB SOP8_TB_taping.pdf
RS3E075ATTB
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-SOP-J
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 11173 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
13+1.4 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.68 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH