RS3E075ATTB Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP-J
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.62 EUR |
| 5000+ | 0.57 EUR |
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Technische Details RS3E075ATTB Rohm Semiconductor
Description: MOSFET P-CH 30V 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP-J, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V.
Weitere Produktangebote RS3E075ATTB nach Preis ab 0.5 EUR bis 1.6 EUR
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RS3E075ATTB | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 30V 7.5A 8-Pin SOP T/R |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
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RS3E075ATTB | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH 30V 7.5A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS3E075ATTB | Hersteller : ROHM Semiconductor |
MOSFET Pch -30V -7.5A Middle Power |
auf Bestellung 7912 Stücke: Lieferzeit 10-14 Tag (e) |
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RS3E075ATTB | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Rds On (Max) @ Id, Vgs: 23.5mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP-J Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 15 V |
auf Bestellung 11173 Stücke: Lieferzeit 10-14 Tag (e) |
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RS3E075ATTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RS3E075ATTB | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.5A; Idm: -30A; 2W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.5A Pulsed drain current: -30A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |