RS3E135BNGZETB Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.88 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details RS3E135BNGZETB Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V.
Weitere Produktangebote RS3E135BNGZETB nach Preis ab 0.75 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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RS3E135BNGZETB | Rohm Semiconductor |
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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RS3E135BNGZETB | Rohm Semiconductor |
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS3E135BNGZETB | ROHM Semiconductor |
MOSFETs Nch 30V 13.5A Si MOSFET |
auf Bestellung 4987 Stücke: Lieferzeit 10-14 Tag (e) |
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RS3E135BNGZETB | Rohm Semiconductor |
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
auf Bestellung 4961 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RS3E135BNGZETB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 1.05 EUR |
| 250+ | 1 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.89 EUR |
| RS3E135BNGZETB |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
Trans MOSFET N-CH 30V 13.5A 8-Pin SOP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 170+ | 1.05 EUR |
| 250+ | 1 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.84 EUR |
| RS3E135BNGZETB |
|
Hersteller: ROHM Semiconductor
MOSFETs Nch 30V 13.5A Si MOSFET
MOSFETs Nch 30V 13.5A Si MOSFET
auf Bestellung 4987 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.09 EUR |
| 10+ | 1.46 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.75 EUR |
| RS3E135BNGZETB |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
auf Bestellung 4961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |