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RS6G100BGTB1

RS6G100BGTB1 ROHM Semiconductor

datasheet?p=RS6G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+2.94 EUR
10+ 2.46 EUR
100+ 1.95 EUR
250+ 1.8 EUR
500+ 1.63 EUR
1000+ 1.48 EUR
2500+ 1.28 EUR
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Technische Details RS6G100BGTB1 ROHM Semiconductor

Description: NCH 40V 100A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 59W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V.

Weitere Produktangebote RS6G100BGTB1 nach Preis ab 1.62 EUR bis 3.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RS6G100BGTB1 RS6G100BGTB1 Hersteller : Rohm Semiconductor datasheet?p=RS6G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
auf Bestellung 2474 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.29 EUR
10+ 2.95 EUR
100+ 2.37 EUR
500+ 1.95 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 6
RS6G100BGTB1 RS6G100BGTB1 Hersteller : Rohm Semiconductor datasheet?p=RS6G100BG&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 40V 100A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
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