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RS6G120BGTB1

RS6G120BGTB1 ROHM Semiconductor

rs6g120bgtb1-e.pdf Hersteller: ROHM Semiconductor
MOSFET 40V MOSFET
auf Bestellung 7132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.63 EUR
10+ 4.73 EUR
25+ 4.47 EUR
100+ 3.84 EUR
250+ 3.63 EUR
500+ 3.4 EUR
1000+ 3.22 EUR
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Technische Details RS6G120BGTB1 ROHM Semiconductor

Description: NCH 40V 210A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V.

Weitere Produktangebote RS6G120BGTB1 nach Preis ab 2.93 EUR bis 5.65 EUR

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RS6G120BGTB1 RS6G120BGTB1 Hersteller : Rohm Semiconductor rs6g120bgtb1-e.pdf Description: NCH 40V 210A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
auf Bestellung 2094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.65 EUR
10+ 4.75 EUR
100+ 3.84 EUR
500+ 3.42 EUR
1000+ 2.93 EUR
Mindestbestellmenge: 4
RS6G120BGTB1 RS6G120BGTB1 Hersteller : Rohm Semiconductor rs6g120bgtb1-e.pdf Description: NCH 40V 210A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 90A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
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