RS6G120BHTB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.27 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details RS6G120BHTB1 Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V.
Weitere Produktangebote RS6G120BHTB1 nach Preis ab 1.98 EUR bis 7.25 EUR
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G120BHTB1 | ROHM Semiconductor |
MOSFETs HSOP8 N-CH 40V 120A |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Description: NCH 40V 210A, HSOP8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V Power Dissipation (Max): 3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-HSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 5.97 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.38 EUR |
| 58+ | 3.07 EUR |
| 63+ | 2.73 EUR |
| 100+ | 2.18 EUR |
| 200+ | 2.01 EUR |
| 500+ | 1.98 EUR |
| RS6G120BHTB1 |
|
Hersteller: ROHM Semiconductor
MOSFETs HSOP8 N-CH 40V 120A
MOSFETs HSOP8 N-CH 40V 120A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.73 EUR |
| 1000+ | 2.51 EUR |
| 2500+ | 2.4 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.64 EUR |
| 25+ | 3.96 EUR |
| 100+ | 3.19 EUR |
| 250+ | 2.81 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.38 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)