RS6G120BHTB1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details RS6G120BHTB1 Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-HSOP, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 3W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RS6G120BHTB1 nach Preis ab 1.93 EUR bis 7.25 EUR
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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RS6G120BHTB1 | ROHM Semiconductor |
MOSFETs HSOP8 N CHAN 40V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Description: NCH 40V 210A, HSOP8, POWER MOSFE Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-HSOP Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6G120BHTB1 | Rohm Semiconductor |
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 37+ | 5.84 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 6.24 EUR |
| 58+ | 3 EUR |
| 63+ | 2.67 EUR |
| 100+ | 2.13 EUR |
| 200+ | 1.96 EUR |
| 500+ | 1.93 EUR |
| RS6G120BHTB1 |
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Hersteller: ROHM Semiconductor
MOSFETs HSOP8 N CHAN 40V
MOSFETs HSOP8 N CHAN 40V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.97 EUR |
| 10+ | 3.96 EUR |
| 100+ | 3.19 EUR |
| 250+ | 2.83 EUR |
| 500+ | 2.59 EUR |
| 1000+ | 2.39 EUR |
| 2500+ | 2.37 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: NCH 40V 210A, HSOP8, POWER MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-HSOP
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.25 EUR |
| 10+ | 4.64 EUR |
| 25+ | 3.96 EUR |
| 100+ | 3.19 EUR |
| 250+ | 2.81 EUR |
| 500+ | 2.58 EUR |
| 1000+ | 2.38 EUR |
| RS6G120BHTB1 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)