Produkte > ROHM SEMICONDUCTOR > RS6L090BGTB1
RS6L090BGTB1

RS6L090BGTB1 ROHM Semiconductor

rs6l090bgtb1-e.pdf Hersteller: ROHM Semiconductor
MOSFET RS6L090BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.71 EUR
10+ 3.1 EUR
100+ 2.46 EUR
250+ 2.27 EUR
500+ 2.06 EUR
1000+ 1.87 EUR
2500+ 1.62 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details RS6L090BGTB1 ROHM Semiconductor

Description: NCH 60V 90A, HSOP8, POWER MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V.

Weitere Produktangebote RS6L090BGTB1 nach Preis ab 1.78 EUR bis 3.75 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RS6L090BGTB1 RS6L090BGTB1 Hersteller : Rohm Semiconductor rs6l090bgtb1-e.pdf Description: NCH 60V 90A, HSOP8, POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
auf Bestellung 2036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.75 EUR
10+ 3.11 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.78 EUR
Mindestbestellmenge: 5
RS6L090BGTB1 RS6L090BGTB1 Hersteller : Rohm Semiconductor rs6l090bgtb1-e.pdf Description: NCH 60V 90A, HSOP8, POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Produkt ist nicht verfügbar