auf Bestellung 4720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.67 EUR |
10+ | 4.77 EUR |
25+ | 4.51 EUR |
100+ | 3.94 EUR |
2500+ | 3.61 EUR |
5000+ | 3.52 EUR |
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Technische Details RS6L120BGTB1 ROHM Semiconductor
Description: NCH 60V 150A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V, Power Dissipation (Max): 104W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 30 V.
Weitere Produktangebote RS6L120BGTB1 nach Preis ab 2.98 EUR bis 5.76 EUR
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RS6L120BGTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 150A, HSOP8, POWER MOSFE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Power Dissipation (Max): 104W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 30 V |
auf Bestellung 2341 Stücke: Lieferzeit 10-14 Tag (e) |
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RS6L120BGTB1 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 150A, HSOP8, POWER MOSFE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V Power Dissipation (Max): 104W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 30 V |
Produkt ist nicht verfügbar |