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RS6L120BHTB1

RS6L120BHTB1 Rohm Semiconductor

datasheet?p=RS6L120BH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Hersteller: Rohm Semiconductor
Description: NCH 60V 150A, HSOP8, POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.94 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RS6L120BHTB1 Rohm Semiconductor

Description: NCH 60V 150A, HSOP8, POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V, Power Dissipation (Max): 3W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-HSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 30 V.

Weitere Produktangebote RS6L120BHTB1 nach Preis ab 1.49 EUR bis 5.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RS6L120BHTB1 RS6L120BHTB1 Hersteller : Rohm Semiconductor rs6l120bhtb1-e.pdf Trans MOSFET N-CH Si 60V 150A 8-Pin HSOP EP
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+4.97 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
RS6L120BHTB1 RS6L120BHTB1 Hersteller : Rohm Semiconductor rs6l120bhtb1-e.pdf Trans MOSFET N-CH Si 60V 150A 8-Pin HSOP EP
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+5.36 EUR
57+2.53 EUR
63+2.21 EUR
100+1.73 EUR
200+1.56 EUR
500+1.49 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
RS6L120BHTB1 RS6L120BHTB1 Hersteller : ROHM Semiconductor datasheet?p=RS6L120BH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key MOSFETs HSOP8 N CHAN 60V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.86 EUR
10+3.34 EUR
100+2.69 EUR
250+2.38 EUR
500+2.18 EUR
1000+2.02 EUR
2500+1.99 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RS6L120BHTB1 RS6L120BHTB1 Hersteller : Rohm Semiconductor datasheet?p=RS6L120BH&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: NCH 60V 150A, HSOP8, POWER MOSFE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 90A, 10V
Power Dissipation (Max): 3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+3.82 EUR
25+3.26 EUR
100+2.63 EUR
250+2.32 EUR
500+2.13 EUR
1000+1.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RS6L120BHTB1 RS6L120BHTB1 Hersteller : Rohm Semiconductor rs6l120bhtb1-e.pdf Trans MOSFET N-CH Si 60V 150A 8-Pin HSOP EP
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH