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RSD050N10TL

RSD050N10TL Rohm Semiconductor

rsd050n10.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 100V 5A 3-Pin(2+Tab) CPT T/R
auf Bestellung 7064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
237+0.66 EUR
352+ 0.43 EUR
500+ 0.41 EUR
1000+ 0.39 EUR
2500+ 0.37 EUR
5000+ 0.35 EUR
Mindestbestellmenge: 237
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Technische Details RSD050N10TL Rohm Semiconductor

Description: MOSFET N-CH 100V 5A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: CPT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.

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RSD050N10TL RSD050N10TL Hersteller : Rohm Semiconductor rsd050n10.pdf Trans MOSFET N-CH Si 100V 5A 3-Pin(2+Tab) CPT T/R
auf Bestellung 20619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
190+0.83 EUR
250+ 0.77 EUR
500+ 0.71 EUR
1000+ 0.66 EUR
2500+ 0.62 EUR
5000+ 0.57 EUR
10000+ 0.54 EUR
Mindestbestellmenge: 190
RSD050N10TL RSD050N10TL Hersteller : ROHM Semiconductor rsd050n10.pdf MOSFET RECOMMENDED ALT 755-RD3P050SNTL1
auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
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2+1.74 EUR
10+ 1.44 EUR
100+ 1.12 EUR
500+ 0.95 EUR
1000+ 0.77 EUR
2500+ 0.73 EUR
5000+ 0.69 EUR
Mindestbestellmenge: 2
RSD050N10TL rsd050n10.pdf
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
RSD050N10TL RSD050N10TL Hersteller : Rohm Semiconductor rsd050n10.pdf Description: MOSFET N-CH 100V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar
RSD050N10TL RSD050N10TL Hersteller : Rohm Semiconductor rsd050n10.pdf Description: MOSFET N-CH 100V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Produkt ist nicht verfügbar