RSD130P10TL
Hersteller: auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details RSD130P10TL
Description: MOSFET P-CH 100V 13A CPT3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Power Dissipation (Max): 20W (Ta), Supplier Device Package: CPT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V.
Weitere Produktangebote RSD130P10TL
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RSD130P10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A CPT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar |
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RSD130P10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 13A CPT3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar |
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RSD130P10TL | Hersteller : ROHM Semiconductor |
MOSFET Pch -100V -13A MOSFET |
Produkt ist nicht verfügbar |