auf Bestellung 12031 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.13 EUR |
| 24000+ | 0.11 EUR |
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Technische Details RSE002N06TL ROHM Semiconductor
Description: MOSFET N-CH 60V 250MA EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: EMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V.
Weitere Produktangebote RSE002N06TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RSE002N06TL |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSE002N06TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
Produkt ist nicht verfügbar |
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RSE002N06TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
Produkt ist nicht verfügbar |