RSF010P03 TL ROHM

Description: MOSFET P-CH 30V 1A TUMT3, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TUMT3, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).