RSF010P05TL

RSF010P05TL Rohm Semiconductor


rsf010p05tl-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 1A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.25 EUR
6000+0.24 EUR
9000+0.22 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Produktbewertung abgeben

Technische Details RSF010P05TL Rohm Semiconductor

Description: MOSFET P-CH 45V 1A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 1A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V.

Weitere Produktangebote RSF010P05TL nach Preis ab 0.28 EUR bis 0.74 EUR

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RSF010P05TL RSF010P05TL Rohm Semiconductor rsf010p05tl-e.pdf Description: MOSFET P-CH 45V 1A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 12524 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
28+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.28 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RSF010P05TL RSF010P05TL ROHM Semiconductor rsf010p05tl-e-1873305.pdf MOSFET 4V Drive Pch MOSFET Drive Pch
auf Bestellung 9055 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RSF010P05TL rsf010p05tl-e.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RSF010P05TL rsf010p05tl-e.pdf
RSF010P05TL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 45V 1A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V
auf Bestellung 12524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
28+0.63 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.28 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
RSF010P05TL rsf010p05tl-e-1873305.pdf
RSF010P05TL
Hersteller: ROHM Semiconductor
MOSFET 4V Drive Pch MOSFET Drive Pch
auf Bestellung 9055 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RSF010P05TL rsf010p05tl-e.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH