| Anzahl | Preis |
|---|---|
| 3+ | 1.38 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
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Technische Details RSF014N03TL ROHM Semiconductor
Description: MOSFET N-CH 30V 1.4A TUMT3, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): 20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSF014N03TL nach Preis ab 0.43 EUR bis 1.53 EUR
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RSF014N03TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 30V 1.4A TUMT3Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): 20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 4049 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSF014N03TL | Hersteller : ROHM |
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auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |