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RSF015N06FRATL

RSF015N06FRATL Rohm Semiconductor


rsf015n06fra-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TUMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSF015N06FRATL Rohm Semiconductor

Description: MOSFET N-CH 60V 1.5A TUMT3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Grade: Automotive, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).

Weitere Produktangebote RSF015N06FRATL nach Preis ab 0.15 EUR bis 0.84 EUR

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RSF015N06FRATL RSF015N06FRATL Hersteller : Rohm Semiconductor rsf015n06fra-e.pdf Description: MOSFET N-CH 60V 1.5A TUMT3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Grade: Automotive
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
33+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
RSF015N06FRATL RSF015N06FRATL Hersteller : ROHM Semiconductor rsf015n06fra-e.pdf MOSFETs Nch 60V Vds 1.5A 0.255Rds(on) 2Qg
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.84 EUR
10+0.55 EUR
100+0.27 EUR
1000+0.23 EUR
3000+0.18 EUR
9000+0.16 EUR
24000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH