RSF015N06TL

RSF015N06TL Rohm Semiconductor


rsf015n06tl-e.pdf
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 13140 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.22 EUR
6000+0.21 EUR
9000+0.2 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSF015N06TL Rohm Semiconductor

Description: MOSFET N-CH 60V 1.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V.

Weitere Produktangebote RSF015N06TL nach Preis ab 0.2 EUR bis 0.84 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RSF015N06TL RSF015N06TL ROHM Semiconductor rsf015n06tl-e.pdf MOSFETs 4V Drive Nch MOSFET Drive Nch
auf Bestellung 12899 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.79 EUR
10+0.52 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.22 EUR
9000+0.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RSF015N06TL RSF015N06TL Rohm Semiconductor rsf015n06tl-e.pdf Description: MOSFET N-CH 60V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 15090 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
30+0.59 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.28 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
RSF015N06TL rsf015n06tl-e.pdf
RSF015N06TL
Hersteller: ROHM Semiconductor
MOSFETs 4V Drive Nch MOSFET Drive Nch
auf Bestellung 12899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.79 EUR
10+0.52 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
3000+0.22 EUR
9000+0.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
RSF015N06TL rsf015n06tl-e.pdf
RSF015N06TL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1.5A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
auf Bestellung 15090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
30+0.59 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.28 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH