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RSH065N06GZETB

RSH065N06GZETB Rohm Semiconductor

rsh065n06.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH Si 60V 6.5A 8-Pin SOP T/R
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
140+1.05 EUR
500+0.86 EUR
1000+0.75 EUR
Mindestbestellmenge: 140
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Technische Details RSH065N06GZETB Rohm Semiconductor

Description: MOSFET N-CH 60V 6.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V.

Weitere Produktangebote RSH065N06GZETB nach Preis ab 0.77 EUR bis 1.94 EUR

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RSH065N06GZETB RSH065N06GZETB Hersteller : Rohm Semiconductor rsh065n06.pdf Trans MOSFET N-CH Si 60V 6.5A 8-Pin SOP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
140+1.05 EUR
250+0.97 EUR
500+0.9 EUR
1000+0.84 EUR
2500+0.78 EUR
Mindestbestellmenge: 140
Im Einkaufswagen  Stück im Wert von  UAH
RSH065N06GZETB RSH065N06GZETB Hersteller : ROHM Semiconductor rsh065n06.pdf MOSFETs MOSFET Nch 60V 6.5A (Ta) 2W (Ta) Surface Mount 8-SOP
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.94 EUR
10+1.3 EUR
100+1.06 EUR
500+0.96 EUR
1000+0.84 EUR
2500+0.77 EUR
Mindestbestellmenge: 2
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RSH065N06GZETB RSH065N06GZETB Hersteller : Rohm Semiconductor rsh065n06.pdf Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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RSH065N06GZETB RSH065N06GZETB Hersteller : Rohm Semiconductor rsh065n06.pdf Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Produkt ist nicht verfügbar
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RSH065N06GZETB RSH065N06GZETB Hersteller : ROHM SEMICONDUCTOR rsh065n06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH