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RSH090N03TB1

RSH090N03TB1 Rohm Semiconductor

RSH090N03.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
auf Bestellung 2403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
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Technische Details RSH090N03TB1 Rohm Semiconductor

Description: MOSFET N-CH 30V 9A SOP8, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V.

Weitere Produktangebote RSH090N03TB1 nach Preis ab 1.04 EUR bis 2.63 EUR

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Preis ohne MwSt
RSH090N03TB1 RSH090N03TB1 Hersteller : ROHM Semiconductor RSH090N03.pdf MOSFET Nch 30V 9A MOSFET
auf Bestellung 2499 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.63 EUR
25+ 2.16 EUR
100+ 1.68 EUR
500+ 1.43 EUR
1000+ 1.16 EUR
2500+ 1.09 EUR
5000+ 1.04 EUR
Mindestbestellmenge: 20
RSH090N03TB1 RSH090N03.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RSH090N03TB1 RSH090N03TB1 Hersteller : Rohm Semiconductor RSH090N03.pdf Description: MOSFET N-CH 30V 9A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
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