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RSJ151P10TL

RSJ151P10TL Rohm Semiconductor

rsj151p10-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 100V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+1.07 EUR
Mindestbestellmenge: 1000
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Technische Details RSJ151P10TL Rohm Semiconductor

Description: MOSFET P-CH 100V 15A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V, Power Dissipation (Max): 1.35W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V.

Weitere Produktangebote RSJ151P10TL nach Preis ab 0.98 EUR bis 3.61 EUR

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RSJ151P10TL RSJ151P10TL Hersteller : Rohm Semiconductor rsj151p10-e.pdf Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 583 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
107+1.46 EUR
114+ 1.33 EUR
131+ 1.11 EUR
200+ 1.02 EUR
500+ 0.98 EUR
Mindestbestellmenge: 107
RSJ151P10TL RSJ151P10TL Hersteller : Rohm Semiconductor rsj151p10-e.pdf Trans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
78+2.01 EUR
100+ 1.85 EUR
250+ 1.71 EUR
500+ 1.58 EUR
Mindestbestellmenge: 78
RSJ151P10TL RSJ151P10TL Hersteller : Rohm Semiconductor rsj151p10-e.pdf Description: MOSFET P-CH 100V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 3072 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.43 EUR
100+ 1.93 EUR
500+ 1.64 EUR
Mindestbestellmenge: 8
RSJ151P10TL RSJ151P10TL Hersteller : ROHM Semiconductor rsj151p10-e.pdf MOSFET 4V Drive Pch MOSFET Drive Pch
auf Bestellung 182 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.61 EUR
18+ 2.96 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.59 EUR
2000+ 1.49 EUR
5000+ 1.42 EUR
Mindestbestellmenge: 15
RSJ151P10TL RSJ151P10TL Hersteller : ROHM ROHM-S-A0003834473-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ151P10TL RSJ151P10TL Hersteller : ROHM ROHM-S-A0003834473-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ151P10TL Hersteller : ROHM SEMICONDUCTOR rsj151p10-e.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RSJ151P10TL Hersteller : ROHM SEMICONDUCTOR rsj151p10-e.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar