RSJ250P10FRATL ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -25A
Pulsed drain current: -50A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.79 EUR |
| 45+ | 1.6 EUR |
| 52+ | 1.4 EUR |
| 54+ | 1.33 EUR |
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Technische Details RSJ250P10FRATL ROHM SEMICONDUCTOR
Description: MOSFET P-CH 100V 25A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RSJ250P10FRATL nach Preis ab 1.33 EUR bis 4.37 EUR
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RSJ250P10FRATL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: TO263 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Application: automotive industry |
auf Bestellung 352 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSJ250P10FRATL | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 100V 25A Automotive 3-Pin(2+Tab) LPTS T/R |
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RSJ250P10FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2887 Stücke: Lieferzeit 21-28 Tag (e) |
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RSJ250P10FRATL | Hersteller : ROHM Semiconductor |
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auf Bestellung 4486 Stücke: Lieferzeit 14-28 Tag (e) |
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RSJ250P10FRATL | Hersteller : ROHM |
Description: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 1018 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10FRATL | Hersteller : ROHM |
Description: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 1018 Stücke: Lieferzeit 14-21 Tag (e) |
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| RSJ250P10FRATL | Hersteller : ROHM - Japan |
Transistor P-Channel MOSFET; 100V; 20V; 25A; 45mOhm; 50W; -55°C~150°C; RSJ250P10FRATL Rohm Semiconductor TRSJ250p10fratl Anzahl je Verpackung: 2 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| RSJ250P10FRATL | Hersteller : Rohm Semiconductor |
Trans MOSFET P-CH Si 100V 25A Automotive AEC-Q101 3-Pin(2+Tab) LPTS T/R |
Produkt ist nicht verfügbar |