RSJ250P10TL Rohm Semiconductor
auf Bestellung 4030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 61+ | 2.59 EUR |
| 63+ | 2.41 EUR |
| 100+ | 2.24 EUR |
| 250+ | 2.09 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.82 EUR |
| 2500+ | 1.71 EUR |
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Technische Details RSJ250P10TL Rohm Semiconductor
Description: MOSFET P-CH 100V 25A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V.
Weitere Produktangebote RSJ250P10TL nach Preis ab 1.16 EUR bis 6.68 EUR
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RSJ250P10TL | Hersteller : Rohm Semiconductor |
 Trans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R |
auf Bestellung 6987 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 1269 Stücke: Lieferzeit 21-28 Tag (e) |
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RSJ250P10TL | Hersteller : ROHM Semiconductor |
MOSFET PWR MOSFET LOW RESIST DEVICE |
auf Bestellung 6989 Stücke: Lieferzeit 161-175 Tag (e) |
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RSJ250P10TL | Hersteller : ROHM |
Description: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: -999°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 2178 Stücke: Lieferzeit 14-21 Tag (e) |
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RSJ250P10TL | Hersteller : ROHM |
Description: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: -999°C Drain-Source-Durchgangswiderstand: 0.045ohm |
auf Bestellung 2178 Stücke: Lieferzeit 14-21 Tag (e) |
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| RSJ250P10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RSJ250P10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 100V 25A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
Produkt ist nicht verfügbar |
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| RSJ250P10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -25A Pulsed drain current: -50A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |