| Anzahl | Preis |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.27 EUR |
| 500+ | 2.11 EUR |
| 1000+ | 1.72 EUR |
| 2000+ | 1.65 EUR |
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Technische Details RSJ301N10TL ROHM Semiconductor
Description: NCH 100V 30A POWER MOSFET : RSJ3, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TO-263S, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 50W (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSJ301N10TL nach Preis ab 3.03 EUR bis 6.58 EUR
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RSJ301N10TL | Rohm Semiconductor |
 Description: NCH 100V 30A POWER MOSFET : RSJ3Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 50W (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TO-263S |
auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSJ301N10TL |
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Hersteller: Rohm Semiconductor
Description: NCH 100V 30A POWER MOSFET : RSJ3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-263S
Description: NCH 100V 30A POWER MOSFET : RSJ3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 50W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TO-263S
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.58 EUR |
| 10+ | 4.32 EUR |
| 100+ | 3.03 EUR |