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RSJ301N10TL

RSJ301N10TL ROHM Semiconductor

rsj301n10tl-e.pdf Hersteller: ROHM Semiconductor
MOSFETs TO263 100V 30A N-CH MOSFET
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Lieferzeit 10-14 Tag (e)
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1+6.53 EUR
10+4.28 EUR
100+3.01 EUR
500+2.52 EUR
1000+2.34 EUR
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Technische Details RSJ301N10TL ROHM Semiconductor

Description: NCH 100V 30A POWER MOSFET : RSJ3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V, Power Dissipation (Max): 50W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-263S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V.

Weitere Produktangebote RSJ301N10TL nach Preis ab 3.03 EUR bis 6.58 EUR

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RSJ301N10TL RSJ301N10TL Hersteller : Rohm Semiconductor rsj301n10tl-e.pdf Description: NCH 100V 30A POWER MOSFET : RSJ3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.58 EUR
10+4.32 EUR
100+3.03 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RSJ301N10TL RSJ301N10TL Hersteller : Rohm Semiconductor rsj301n10tl-e.pdf Description: NCH 100V 30A POWER MOSFET : RSJ3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH