| Anzahl | Preis |
|---|---|
| 1+ | 7.13 EUR |
| 10+ | 4.84 EUR |
| 25+ | 4.56 EUR |
| 100+ | 3.8 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.92 EUR |
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Technische Details RSJ400N10TL ROHM Semiconductor
Description: MOSFET N-CH 100V 40A LPTS, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: LPTS, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.35W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote RSJ400N10TL nach Preis ab 5.04 EUR bis 7.6 EUR
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RSJ400N10TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 100V 40A LPTSVgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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RSJ400N10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 40A LPTS Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
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