RSJ451N04FRATL ROHM Semiconductor
auf Bestellung 188 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.95 EUR |
| 11+ | 4.97 EUR |
| 100+ | 3.95 EUR |
| 250+ | 3.85 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 2.81 EUR |
| 2000+ | 2.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details RSJ451N04FRATL ROHM Semiconductor
Description: MOSFET N-CH 40V 45A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote RSJ451N04FRATL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
RSJ451N04FRATL | Hersteller : ROHM |
 Description: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), OberflächenmontagetariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0095ohm |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|
|
RSJ451N04FRATL | Hersteller : ROHM |
Description: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 50W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0095ohm |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
RSJ451N04FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 45A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
RSJ451N04FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 40V 45A LPTS Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |