auf Bestellung 728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.87 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.03 EUR |
| 500+ | 3.85 EUR |
| 1000+ | 3.2 EUR |
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Technische Details RSJ550N10TL ROHM Semiconductor
Description: MOSFET N-CH 100V 55A LPTS, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Ta), Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: LPTS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V.
Weitere Produktangebote RSJ550N10TL nach Preis ab 3.34 EUR bis 7.9 EUR
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RSJ550N10TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 100V 55A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSJ550N10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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RSJ550N10TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 100V 55A LPTS Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V |
Produkt ist nicht verfügbar |
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| RSJ550N10TL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 55A Power dissipation: 100W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
Produkt ist nicht verfügbar |