RSL020P03FRATR Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.34 EUR |
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Technische Details RSL020P03FRATR Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TUMT6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSL020P03FRATR nach Preis ab 0.33 EUR bis 1.57 EUR
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RSL020P03FRATR | Hersteller : ROHM Semiconductor |
MOSFETs Pch -30V Vds -2A 0.14Rds(on) 3.9Qg |
auf Bestellung 4458 Stücke: Lieferzeit 10-14 Tag (e) |
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RSL020P03FRATR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TUMT6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 13456 Stücke: Lieferzeit 10-14 Tag (e) |
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