RSL020P03TR ROHM Semiconductor
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.39 EUR |
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Technische Details RSL020P03TR ROHM Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: TUMT6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RSL020P03TR | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V |
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