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RSL020P03TR

RSL020P03TR Rohm Semiconductor

RSL020P03.pdf Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSL020P03TR Rohm Semiconductor

Description: MOSFET P-CH 30V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: TUMT6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V.

Weitere Produktangebote RSL020P03TR nach Preis ab 0.30 EUR bis 1.00 EUR

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RSL020P03TR RSL020P03TR Hersteller : Rohm Semiconductor RSL020P03.pdf Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 8261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.33 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
RSL020P03TR RSL020P03TR Hersteller : ROHM Semiconductor rohm semiconductor_rohms32378-1.pdf MOSFETs Med Pwr, Sw MOSFET P Chan, -30V, -2A
auf Bestellung 2949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.00 EUR
10+0.87 EUR
100+0.65 EUR
500+0.51 EUR
1000+0.39 EUR
3000+0.32 EUR
9000+0.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RSL020P03TR RSL020P03.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RSL020P03TR RSL020P03TR Hersteller : Rohm Semiconductor RSL020P03.pdf Description: MOSFET P-CH 30V 2A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH