RSM002P03T2L Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 30V 200MA VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.42 EUR |
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Technische Details RSM002P03T2L Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: VMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.
Weitere Produktangebote RSM002P03T2L nach Preis ab 0.44 EUR bis 1.25 EUR
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RSM002P03T2L | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 200MA VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: VMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V |
auf Bestellung 32600 Stücke: Lieferzeit 21-28 Tag (e) |
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RSM002P03T2L | Hersteller : ROHM Semiconductor |
MOSFET P-CH 30V 200MA |
auf Bestellung 16000 Stücke: Lieferzeit 14-28 Tag (e) |
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| RSM002P03T2L |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RSM002P03T2L | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Case: VMT3 Drain-source voltage: -30V Drain current: -200mA On-state resistance: 2.4Ω Type of transistor: P-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -0.4A Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RSM002P03T2L | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Case: VMT3 Drain-source voltage: -30V Drain current: -200mA On-state resistance: 2.4Ω Type of transistor: P-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -0.4A Mounting: SMD |
Produkt ist nicht verfügbar |