RSM002P03T2L Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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Technische Details RSM002P03T2L Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: VMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-723, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSM002P03T2L nach Preis ab 0.27 EUR bis 1.49 EUR
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RSM002P03T2L | ROHM Semiconductor |
MOSFETs P-CH 30V 200MA |
auf Bestellung 7555 Stücke: Lieferzeit 10-14 Tag (e) |
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RSM002P03T2L | Rohm Semiconductor |
Description: MOSFET P-CH 30V 200MA VMT3 Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: VMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
auf Bestellung 13572 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSM002P03T2L |
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auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RSM002P03T2L |
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Hersteller: ROHM Semiconductor
MOSFETs P-CH 30V 200MA
MOSFETs P-CH 30V 200MA
auf Bestellung 7555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.31 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.35 EUR |
| 8000+ | 0.27 EUR |
| RSM002P03T2L |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 200MA VMT3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: VMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 13572 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 23+ | 0.92 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.37 EUR |
| RSM002P03T2L |
|
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)