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RSQ015P10FRATR ROHM SEMICONDUCTOR


Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
Anzahl je Verpackung: 1 Stücke
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Technische Details RSQ015P10FRATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6, Case: TSMT6, Mounting: SMD, Kind of package: reel; tape, Drain-source voltage: -100V, Drain current: -1.5A, On-state resistance: 0.54Ω, Type of transistor: P-MOSFET, Polarisation: unipolar, Gate charge: 17nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -6A, Power dissipation: 1.25W, Anzahl je Verpackung: 1 Stücke.

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RSQ015P10FRATR Hersteller : ROHM SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -100V
Drain current: -1.5A
On-state resistance: 0.54Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6A
Power dissipation: 1.25W
Produkt ist nicht verfügbar