RSQ020N03HZGTR ROHM Semiconductor
Hersteller: ROHM Semiconductor
MOSFET Automotive Nch 30V 2A Small Signal MOSFET. RSQ020N03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
MOSFET Automotive Nch 30V 2A Small Signal MOSFET. RSQ020N03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 1693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.05 EUR |
10+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
3000+ | 0.34 EUR |
9000+ | 0.32 EUR |
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Technische Details RSQ020N03HZGTR ROHM Semiconductor
Description: MOSFET N-CH 30V 2A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSQ020N03HZGTR nach Preis ab 0.4 EUR bis 1.06 EUR
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RSQ020N03HZGTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1190 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ020N03HZGTR | Hersteller : ROHM |
Description: ROHM - RSQ020N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ020N03HZGTR | Hersteller : ROHM |
Description: ROHM - RSQ020N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Anzahl der Pins: 6Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm |
auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ020N03HZGTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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RSQ020N03HZGTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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RSQ020N03HZGTR | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |