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RSQ030N08HZGTR

RSQ030N08HZGTR Rohm Semiconductor

rsq030n08hzgtr-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSQ030N08HZGTR Rohm Semiconductor

Description: MOSFET N-CH 80V 3A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V, Qualification: AEC-Q101.

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RSQ030N08HZGTR RSQ030N08HZGTR Hersteller : ROHM Semiconductor rsq030n08hzgtr-e.pdf MOSFETs Automotive Nch 80V 3A Small Signal MOSFET - RSQ030N08HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
auf Bestellung 25823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+0.97 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.53 EUR
3000+0.47 EUR
6000+0.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
RSQ030N08HZGTR RSQ030N08HZGTR Hersteller : Rohm Semiconductor rsq030n08hzgtr-e.pdf Description: MOSFET N-CH 80V 3A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+0.99 EUR
100+0.73 EUR
500+0.61 EUR
1000+0.56 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
RSQ030N08HZGTR Hersteller : ROHM SEMICONDUCTOR rsq030n08hzgtr-e.pdf RSQ030N08HZGTR SMD N channel transistors
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