RSQ035N03HZGTR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
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Technische Details RSQ035N03HZGTR Rohm Semiconductor
Description: MOSFET N-CH 30V 3.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RSQ035N03HZGTR nach Preis ab 0.37 EUR bis 1.5 EUR
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RSQ035N03HZGTR | Hersteller : ROHM Semiconductor |
MOSFETs Nch 30V 3.5A Small Signal MOSFET |
auf Bestellung 6231 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N03HZGTR | Hersteller : ROHM |
Description: ROHM - RSQ035N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 3.5 A, 0.044 ohm, TSMT, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1643 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N03HZGTR | Hersteller : ROHM |
Description: ROHM - RSQ035N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 3.5 A, 0.044 ohm, TSMT, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 1643 Stücke: Lieferzeit 14-21 Tag (e) |
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| RSQ035N03HZGTR | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 30V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N03HZGTR | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 3.5A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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