RSQ035N06HZGTR Rohm Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 527+ | 0.33 EUR |
| 530+ | 0.32 EUR |
| 552+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| 2000+ | 0.29 EUR |
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Technische Details RSQ035N06HZGTR Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote RSQ035N06HZGTR nach Preis ab 0.48 EUR bis 2.26 EUR
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RSQ035N06HZGTR | Rohm Semiconductor |
 Description: MOSFET N-CH 60V 3.5A TSMT6Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R |
auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor |
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 3.5A TSMT6 Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 8392 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N06HZGTR | ROHM Semiconductor |
MOSFETs SOT457 N-CH 60V 3.5A |
auf Bestellung 9876 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSQ035N06HZGTR |
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Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 3.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| RSQ035N06HZGTR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.64 EUR |
| RSQ035N06HZGTR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.64 EUR |
| 5000+ | 0.62 EUR |
| RSQ035N06HZGTR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 60V 3.5A TSMT6
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 8392 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| RSQ035N06HZGTR |
|
Hersteller: ROHM Semiconductor
MOSFETs SOT457 N-CH 60V 3.5A
MOSFETs SOT457 N-CH 60V 3.5A
auf Bestellung 9876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.42 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.57 EUR |