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RSQ035N06HZGTR

RSQ035N06HZGTR Rohm Semiconductor

rsq035n06hzgtr-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
527+0.3 EUR
530+ 0.28 EUR
552+ 0.26 EUR
1000+ 0.25 EUR
2000+ 0.24 EUR
Mindestbestellmenge: 527
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Technische Details RSQ035N06HZGTR Rohm Semiconductor

Description: MOSFET N-CH 60V 3.5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V, Power Dissipation (Max): 950mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote RSQ035N06HZGTR nach Preis ab 0.45 EUR bis 1.24 EUR

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RSQ035N06HZGTR RSQ035N06HZGTR Hersteller : Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.47 EUR
Mindestbestellmenge: 3000
RSQ035N06HZGTR RSQ035N06HZGTR Hersteller : Rohm Semiconductor rsq035n06hzgtr-e.pdf Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.72 EUR
250+ 0.66 EUR
500+ 0.62 EUR
1000+ 0.57 EUR
2500+ 0.53 EUR
Mindestbestellmenge: 218
RSQ035N06HZGTR RSQ035N06HZGTR Hersteller : Rohm Semiconductor rsq035n06hzgtr-e.pdf Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
218+0.72 EUR
250+ 0.66 EUR
500+ 0.62 EUR
1000+ 0.57 EUR
2500+ 0.53 EUR
5000+ 0.5 EUR
Mindestbestellmenge: 218
RSQ035N06HZGTR RSQ035N06HZGTR Hersteller : Rohm Semiconductor rsq035n06hzgtr-e.pdf Description: MOSFET N-CH 60V 3.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
17+ 1.07 EUR
100+ 0.74 EUR
500+ 0.62 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 15
RSQ035N06HZGTR RSQ035N06HZGTR Hersteller : ROHM Semiconductor rsq035n06hzgtr-e.pdf MOSFET 60V N-CHANNEL 3.5A
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.24 EUR
10+ 1.08 EUR
100+ 0.75 EUR
500+ 0.62 EUR
1000+ 0.53 EUR
3000+ 0.48 EUR
6000+ 0.45 EUR
Mindestbestellmenge: 3
RSQ035N06HZGTR Hersteller : ROHM SEMICONDUCTOR rsq035n06hzgtr-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RSQ035N06HZGTR Hersteller : ROHM SEMICONDUCTOR rsq035n06hzgtr-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar