RSQ045N03HZGTR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Qualification: AEC-Q101
Grade: Automotive
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Technische Details RSQ045N03HZGTR Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 950mW (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSMT6 (SC-95), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote RSQ045N03HZGTR nach Preis ab 0.52 EUR bis 2.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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RSQ045N03HZGTR | ROHM |
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4281 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ045N03HZGTR | ROHM |
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 4061 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ045N03HZGTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6 Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Active Supplier Device Package: TSMT6 (SC-95) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 950mW (Ta) |
auf Bestellung 3014 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ045N03HZGTR | ROHM Semiconductor |
MOSFETs Automotive Nch 30V 4.5A Small Signal MOSFET |
auf Bestellung 3471 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: ROHM
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: TSMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: TSMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4281 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 1.42 EUR |
| 216+ | 1.08 EUR |
| 275+ | 0.79 EUR |
| 500+ | 0.56 EUR |
| 1500+ | 0.55 EUR |
| RSQ045N03HZGTR |
|
Hersteller: ROHM
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: TSMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (23-Jan-2024)
Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.25W
Bauform - Transistor: TSMT
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.027ohm
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 4061 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 168+ | 1.49 EUR |
| 200+ | 1.17 EUR |
| 248+ | 0.87 EUR |
| 500+ | 0.69 EUR |
| 1500+ | 0.68 EUR |
| RSQ045N03HZGTR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
Description: MOSFET N-CH 30V 4.5A TSMT6
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 950mW (Ta)
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.39 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| RSQ045N03HZGTR |
|
Hersteller: ROHM Semiconductor
MOSFETs Automotive Nch 30V 4.5A Small Signal MOSFET
MOSFETs Automotive Nch 30V 4.5A Small Signal MOSFET
auf Bestellung 3471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.4 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.61 EUR |
| 6000+ | 0.52 EUR |