RSR010N10TL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Tape & Reel (TR)
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Technische Details RSR010N10TL Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 540mW (Ta), Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSR010N10TL nach Preis ab 0.46 EUR bis 2.14 EUR
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RSR010N10TL | ROHM Semiconductor |
MOSFET 4V Drive Nch MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSR010N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 1A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) |
auf Bestellung 4760 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSR010N10TL |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RSR010N10TL |
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Hersteller: ROHM Semiconductor
MOSFET 4V Drive Nch MOSFET
MOSFET 4V Drive Nch MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.46 EUR |
| RSR010N10TL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 100V 1A TSMT3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Description: MOSFET N-CH 100V 1A TSMT3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
auf Bestellung 4760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| RSR010N10TL |
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auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)