RSR015P06HZGTL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.45 EUR |
| 9000+ | 0.44 EUR |
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Technische Details RSR015P06HZGTL Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSR015P06HZGTL nach Preis ab 0.45 EUR bis 2.01 EUR
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RSR015P06HZGTL | ROHM Semiconductor |
MOSFETs MOSFET Pch -60V -1.5A, DriveVoltage:-4 SOT346T |
auf Bestellung 147 Stücke: Lieferzeit 10-14 Tag (e) |
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RSR015P06HZGTL | Rohm Semiconductor |
Description: MOSFET P-CH 60V 1.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 10236 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RSR015P06HZGTL |
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Hersteller: ROHM Semiconductor
MOSFETs MOSFET Pch -60V -1.5A, DriveVoltage:-4 SOT346T
MOSFETs MOSFET Pch -60V -1.5A, DriveVoltage:-4 SOT346T
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.98 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.49 EUR |
| 6000+ | 0.45 EUR |
| RSR015P06HZGTL |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 10236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.01 EUR |
| 17+ | 1.26 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |