RSR015P06HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
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Technische Details RSR015P06HZGTL Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RSR015P06HZGTL nach Preis ab 0.36 EUR bis 1.04 EUR
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RSR015P06HZGTL | Hersteller : ROHM Semiconductor |
MOSFET Pch -60V -1.5A Small Signal MOSFET for Automotive. RSR015P06HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications. |
auf Bestellung 10951 Stücke: Lieferzeit 10-14 Tag (e) |
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RSR015P06HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 60V 1.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8979 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSR015P06HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| RSR015P06HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.5A; Idm: -6A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Drain current: -1.5A On-state resistance: 0.36Ω Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 10nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Drain-source voltage: -60V |
Produkt ist nicht verfügbar |