Produkte > ROHM SEMICONDUCTOR > RSR015P06HZGTL
RSR015P06HZGTL

RSR015P06HZGTL Rohm Semiconductor

rsr015p06hzgtl-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details RSR015P06HZGTL Rohm Semiconductor

Description: MOSFET P-CH 60V 1.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RSR015P06HZGTL nach Preis ab 0.38 EUR bis 1.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RSR015P06HZGTL RSR015P06HZGTL Hersteller : ROHM Semiconductor rsr015p06hzgtl-e.pdf MOSFETs Pch -60V -1.5A Small Signal MOSFET for Automotive. RSR015P06HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications.
auf Bestellung 3459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+0.94 EUR
100+0.66 EUR
500+0.54 EUR
1000+0.48 EUR
3000+0.42 EUR
6000+0.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
RSR015P06HZGTL RSR015P06HZGTL Hersteller : Rohm Semiconductor rsr015p06hzgtl-e.pdf Description: MOSFET P-CH 60V 1.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.70 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
RSR015P06HZGTL Hersteller : ROHM SEMICONDUCTOR rsr015p06hzgtl-e.pdf RSR015P06HZGTL SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH