auf Bestellung 6840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.35 EUR |
| 6000+ | 0.32 EUR |
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Technische Details RSR020N06HZGTL ROHM Semiconductor
Description: MOSFET N-CH 60V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSR020N06HZGTL nach Preis ab 0.4 EUR bis 1.27 EUR
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RSR020N06HZGTL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 60V 2A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 1888 Stücke: Lieferzeit 10-14 Tag (e) |
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RSR020N06HZGTL | Hersteller : ROHM |
Description: ROHM - RSR020N06HZGTL - Leistungs-MOSFET, n-Kanal, 60 V, 2 A, 0.12 ohm, TSMT, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 2 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 1 Bauform - Transistor: TSMT Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.12 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.5 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 2864 Stücke: Lieferzeit 14-21 Tag (e) |
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RSR020N06HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 2A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| RSR020N06HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Case: TSMT3 Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 8A Drain current: 2A Gate charge: 2.7nC On-state resistance: 0.21Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
Produkt ist nicht verfügbar |