auf Bestellung 1164 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.44 EUR |
| 41+ | 1.27 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.62 EUR |
| 3000+ | 0.56 EUR |
| 9000+ | 0.52 EUR |
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Technische Details RSR020P03TL ROHM Semiconductor
Description: MOSFET P-CH 30V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: TSMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V.
Weitere Produktangebote RSR020P03TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| RSR020P03TL |
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auf Bestellung 180000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RSR020P03 TL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 2995 Stücke: Lieferzeit 21-28 Tag (e) |
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RSR020P03TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
Produkt ist nicht verfügbar |
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RSR020P03TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V |
Produkt ist nicht verfügbar |