RSR020P03TL ROHM Semiconductor

Description: MOSFET P-CH 30V 2A TSMT3, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Not For New Designs, Supplier Device Package: TSMT3, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).