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RSR025N05HZGTL

RSR025N05HZGTL Rohm Semiconductor

rsr025n05hzgtl-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSR025N05HZGTL Rohm Semiconductor

Description: MOSFET N-CH 45V 2.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote RSR025N05HZGTL nach Preis ab 0.39 EUR bis 1.25 EUR

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RSR025N05HZGTL RSR025N05HZGTL Hersteller : Rohm Semiconductor rsr025n05hzgtl-e.pdf Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
18+1 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
RSR025N05HZGTL RSR025N05HZGTL Hersteller : ROHM Semiconductor rsr025n05hzgtl-e.pdf MOSFETs Automotive Nch 45V 2.5A Small Signal MOSFET
auf Bestellung 3807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.25 EUR
10+0.96 EUR
100+0.65 EUR
500+0.55 EUR
1000+0.46 EUR
3000+0.4 EUR
6000+0.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH