| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.46 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |
| 3000+ | 0.61 EUR |
| 6000+ | 0.56 EUR |
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Technische Details RSR025N05TL ROHM Semiconductor
Description: NCH 45V 2.5A SMALL SIGNAL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V, Drain to Source Voltage (Vdss): 45 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TSMT3, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-96, Packaging: Tape & Reel (TR).
Weitere Produktangebote RSR025N05TL nach Preis ab 0.69 EUR bis 2.34 EUR
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RSR025N05TL | Rohm Semiconductor |
 Description: NCH 45V 2.5A SMALL SIGNAL MOSFETPower Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V Drain to Source Voltage (Vdss): 45 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 3V @ 1mA |
auf Bestellung 2261 Stücke: Lieferzeit 10-14 Tag (e) |
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| RSR025N05TL |
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Hersteller: Rohm Semiconductor
Description: NCH 45V 2.5A SMALL SIGNAL MOSFET
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
Description: NCH 45V 2.5A SMALL SIGNAL MOSFET
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 3V @ 1mA
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |