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RSR025N05TL

RSR025N05TL ROHM Semiconductor

rsr025n05tl-e.pdf Hersteller: ROHM Semiconductor
MOSFETs SOT346 N-CH 45V 2.5A
auf Bestellung 3130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.23 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.58 EUR
3000+0.51 EUR
6000+0.47 EUR
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Technische Details RSR025N05TL ROHM Semiconductor

Description: NCH 45V 2.5A SMALL SIGNAL MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: TSMT3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V.

Weitere Produktangebote RSR025N05TL nach Preis ab 0.58 EUR bis 1.97 EUR

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RSR025N05TL RSR025N05TL Hersteller : Rohm Semiconductor rsr025n05tl-e.pdf Description: NCH 45V 2.5A SMALL SIGNAL MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
auf Bestellung 2261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
15+1.24 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
RSR025N05TL RSR025N05TL Hersteller : Rohm Semiconductor rsr025n05tl-e.pdf Description: NCH 45V 2.5A SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH