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RSR030N06HZGTL

RSR030N06HZGTL Rohm Semiconductor


rsr030n06hzgtl-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4950 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details RSR030N06HZGTL Rohm Semiconductor

Description: MOSFET N-CH 60V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote RSR030N06HZGTL nach Preis ab 0.28 EUR bis 1.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RSR030N06HZGTL RSR030N06HZGTL Hersteller : ROHM SEMICONDUCTOR rsr030n06hzgtl-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.22 EUR
83+0.87 EUR
242+0.30 EUR
256+0.28 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL RSR030N06HZGTL Hersteller : ROHM SEMICONDUCTOR rsr030n06hzgtl-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
83+0.87 EUR
242+0.30 EUR
256+0.28 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL RSR030N06HZGTL Hersteller : Rohm Semiconductor rsr030n06hzgtl-e.pdf Description: MOSFET N-CH 60V 3A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6661 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
16+1.17 EUR
100+0.77 EUR
500+0.60 EUR
1000+0.54 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
RSR030N06HZGTL RSR030N06HZGTL Hersteller : ROHM Semiconductor rsr030n06hzgtl-e.pdf MOSFETs Automotive Nch 60V 3A Small Signal MOSFET
auf Bestellung 3429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.92 EUR
10+1.19 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
3000+0.45 EUR
6000+0.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH