RSR030N06HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 60V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
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Technische Details RSR030N06HZGTL Rohm Semiconductor
Description: MOSFET N-CH 60V 3A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RSR030N06HZGTL nach Preis ab 0.28 EUR bis 1.92 EUR
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RSR030N06HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Drain-source voltage: 60V Drain current: 3A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2200 Stücke: Lieferzeit 7-14 Tag (e) |
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RSR030N06HZGTL | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Drain-source voltage: 60V Drain current: 3A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 12A |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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RSR030N06HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 60V 3A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6661 Stücke: Lieferzeit 10-14 Tag (e) |
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RSR030N06HZGTL | Hersteller : ROHM Semiconductor |
MOSFETs Automotive Nch 60V 3A Small Signal MOSFET |
auf Bestellung 3429 Stücke: Lieferzeit 10-14 Tag (e) |
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