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RSS070P05HZGTB

RSS070P05HZGTB Rohm Semiconductor

rss070p05hzgtb-e.pdf Hersteller: Rohm Semiconductor
Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.1 EUR
100+ 1.67 EUR
500+ 1.42 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 7
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Technische Details RSS070P05HZGTB Rohm Semiconductor

Description: PCH -45V -7A POWER MOSFET. RSS07, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V, Qualification: AEC-Q101.

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Preis ohne MwSt
RSS070P05HZGTB RSS070P05HZGTB Hersteller : ROHM Semiconductor rss070p05hzgtb-e.pdf MOSFET AECQ
auf Bestellung 1783 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.72 EUR
17+ 3.09 EUR
100+ 2.47 EUR
500+ 2.06 EUR
1000+ 1.77 EUR
2500+ 1.67 EUR
5000+ 1.62 EUR
Mindestbestellmenge: 14
RSS070P05HZGTB RSS070P05HZGTB Hersteller : ROHM 3312839.pdf Description: ROHM - RSS070P05HZGTB - Leistungs-MOSFET, p-Kanal, 45 V, 7 A, 0.019 ohm, SOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 45V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 7232 Stücke:
Lieferzeit 14-21 Tag (e)
RSS070P05HZGTB RSS070P05HZGTB Hersteller : Rohm Semiconductor rss070p05hzgtb-e.pdf Description: PCH -45V -7A POWER MOSFET. RSS07
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Qualification: AEC-Q101
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