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RSS100N03FRATB

RSS100N03FRATB Rohm Semiconductor


rss100n03fra-e.pdf Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2410 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.18 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
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Technische Details RSS100N03FRATB Rohm Semiconductor

Description: MOSFET N-CH 30V 10A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote RSS100N03FRATB nach Preis ab 0.97 EUR bis 2.3 EUR

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RSS100N03FRATB RSS100N03FRATB Hersteller : ROHM Semiconductor rss100n03fra-e.pdf MOSFET Nch 30V Vds 10A 0.0135Rds(on) 14Qg
auf Bestellung 2763 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.3 EUR
26+ 2.05 EUR
100+ 1.6 EUR
500+ 1.35 EUR
1000+ 1.07 EUR
2500+ 1 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 23
RSS100N03FRATB RSS100N03FRATB Hersteller : ROHM ROHM-S-A0009016303-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ROHM - RSS100N03FRATB - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.0095 ohm, SOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0095ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
RSS100N03FRATB RSS100N03FRATB Hersteller : ROHM ROHM-S-A0009016303-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ROHM - RSS100N03FRATB - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.0095 ohm, SOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 2W
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0095ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 1281 Stücke:
Lieferzeit 14-21 Tag (e)
RSS100N03FRATB RSS100N03FRATB Hersteller : Rohm Semiconductor rss100n03fra-e.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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