RT1A050ZPTR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A 8TSST
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.57 EUR |
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Technische Details RT1A050ZPTR Rohm Semiconductor
Description: MOSFET P-CH 12V 5A 8TSST, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: 8-TSST, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 600mW (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RT1A050ZPTR nach Preis ab 0.66 EUR bis 1.9 EUR
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RT1A050ZPTR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 5A 8TSST Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: 8-TSST Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 7984 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RT1A050ZPTR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A 8TSST
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 5A 8TSST
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-TSST
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 7984 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 14+ | 1.28 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.66 EUR |