RTF010P02TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 20V 1A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 2483 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.48 EUR |
| 20+ | 0.92 EUR |
| 100+ | 0.60 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.41 EUR |
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Technische Details RTF010P02TL Rohm Semiconductor
Description: MOSFET P-CH 20V 1A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TUMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V.
Weitere Produktangebote RTF010P02TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| RTF010P02TL | Hersteller : ROHM |
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auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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| RTF010P02TL | Hersteller : ROHM |
09+ SOT-323 |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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RTF010P02TL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 1A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
Produkt ist nicht verfügbar |
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RTF010P02TL | Hersteller : ROHM Semiconductor |
MOSFET P-CH 20V 1A TUMT3 |
Produkt ist nicht verfügbar |