RTF010P02TL Rohm Semiconductor

Description: MOSFET P-CH 20V 1A TUMT3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: TUMT3.