RTF025N03FRATL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT3
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
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Technische Details RTF025N03FRATL Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TUMT3, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 800mW (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 3-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote RTF025N03FRATL nach Preis ab 0.18 EUR bis 0.83 EUR
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RTF025N03FRATL | Hersteller : ROHM Semiconductor |
MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg |
auf Bestellung 34076 Stücke: Lieferzeit 10-14 Tag (e) |
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RTF025N03FRATL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TUMT3 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TUMT3 Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 4967 Stücke: Lieferzeit 10-14 Tag (e) |
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