RTL020P02FRATR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): ±12V
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Technische Details RTL020P02FRATR Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Qualification: AEC-Q101, Grade: Automotive, Vgs (Max): ±12V.
Weitere Produktangebote RTL020P02FRATR nach Preis ab 0.23 EUR bis 1.34 EUR
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RTL020P02FRATR | Rohm Semiconductor |
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R |
auf Bestellung 2374 Stücke: Lieferzeit 14-21 Tag (e) |
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RTL020P02FRATR | Rohm Semiconductor |
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R |
auf Bestellung 2762 Stücke: Lieferzeit 14-21 Tag (e) |
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RTL020P02FRATR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6 Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TUMT6 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 4358 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RTL020P02FRATR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R
auf Bestellung 2374 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 548+ | 0.32 EUR |
| 552+ | 0.31 EUR |
| 721+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| RTL020P02FRATR |
|
Hersteller: Rohm Semiconductor
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R
Trans MOSFET P-CH Si 20V 2A Automotive 6-Pin TUMT T/R
auf Bestellung 2762 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 392+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| 2500+ | 0.38 EUR |
| RTL020P02FRATR |
|
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 20V 2A TUMT6
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TUMT6
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 4358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.34 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |