RTL020P02TR Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
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Technische Details RTL020P02TR Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TUMT6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V.
Weitere Produktangebote RTL020P02TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| RTL020P02TR |
|
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RTL020P02TR |
|
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)