Produkte > ROHM SEMICONDUCTOR > RTQ035P02FHATR

RTQ035P02FHATR ROHM SEMICONDUCTOR



Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6
Case: TSMT6
Power dissipation: 1.25W
Gate charge: 10.5nC
Polarisation: unipolar
Drain current: -3.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.1Ω
Mounting: SMD
Pulsed drain current: -14A
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Technische Details RTQ035P02FHATR ROHM SEMICONDUCTOR

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -14A; 1.25W; TSMT6, Case: TSMT6, Power dissipation: 1.25W, Gate charge: 10.5nC, Polarisation: unipolar, Drain current: -3.5A, Kind of channel: enhancement, Drain-source voltage: -20V, Type of transistor: P-MOSFET, Gate-source voltage: ±12V, Kind of package: reel; tape, On-state resistance: 0.1Ω, Mounting: SMD, Pulsed drain current: -14A.